Organic quantum well light emitting diodes

Chan, J., Lu, A. W., Ng, A. M. C., Djurisic, A. B. and Rakic, A. D. (2006). Organic quantum well light emitting diodes. In: D. Abbott, Y. S. Kivshar, H. H. Rubinsztein-Dunlop and S. Fan, Proceedings of SPIE 6038: Photonics: Design, Technology, and Packaging II. SPIE International Symposium on Microelectronics, MEMS, and Nanotechnology 2005, Brisbane, QUT, (60381M-1-60381M-10). 12 - 15 December 2005. doi:10.1117/12.638370

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Author Chan, J.
Lu, A. W.
Ng, A. M. C.
Djurisic, A. B.
Rakic, A. D.
Title of paper Organic quantum well light emitting diodes
Conference name SPIE International Symposium on Microelectronics, MEMS, and Nanotechnology 2005
Conference location Brisbane, QUT
Conference dates 12 - 15 December 2005
Proceedings title Proceedings of SPIE 6038: Photonics: Design, Technology, and Packaging II   Check publisher's open access policy
Journal name Photonics: Design, Technology, and Packaging II   Check publisher's open access policy
Place of Publication Washington, USA
Publisher The International Society for Optical Engineering
Publication Year 2006
Sub-type Fully published paper
DOI 10.1117/12.638370
Open Access Status File (Publisher version)
ISBN 0-8194-6069-9
ISSN 0277-786X
Editor D. Abbott
Y. S. Kivshar
H. H. Rubinsztein-Dunlop
S. Fan
Volume 6038
Issue 1
Start page 60381M-1
End page 60381M-10
Total pages 10
Language eng
Abstract/Summary This work reports on simulation and experimental investigation into the charge transport and electroluminescence in a quantum well (QW) organic light emitting diode (OLED) consisting of a N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) as a hole transport layer, tris (8-hydroxyquinoline) aluminum (Alq3) as a potential barrier and electron transporting layer, and rubrene as potential well layer. Indium tin oxide was used as an anode, while LiF/Al was employed as a cathode. The carrier transport was simulated using one-dimensional time-independent drift-diffusion model. The influence of the well width, barrier width, and the number of QWs on the carrier distribution, recombination rate, and device performance was investigated. Finally, the device structures which yielded most promising simulation results were fabricated and characterized. The comparison between the experimental and theoretical results is discussed.
Subjects 240402 Quantum Optics and Lasers
240401 Optics and Opto-electronic Physics
Keyword OLED
Organic light-emitting diodes
Transport layer
Q-Index Code EX
Q-Index Status Provisional Code
Additional Notes Copyright 2006 Society of Photo-Optical Instrumentation Engineers. This paper was published in Proceedings of SPIE 6038 (2006) and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. Preprint of: J. Chan, Albert W. Lu, Alan Man Ching Ng, A. B. Djurisic, A. D. Rakic "Organic quantum well light emitting diodes' Proc. SPIE 6038, 360-369 (2006)

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Created: Thu, 16 Feb 2006, 10:00:00 EST by Jesse Chan on behalf of School of Information Technol and Elec Engineering