Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires

Jackson, H. E., Montazeri, M., Fickenscher, M., Smith, L. M., Yarrison-Rice, J. M., Kang, J. H., Gao, Q., Tan, H. H., Jagadish, C., Guo, Y., Zou, J., Pistol, M. E. and Pryor, C. E. (2011). Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires. In: Ihm, J and Cheong, H, Physics of Semiconductors: 30th International Conference On the Physics of Semiconductors. 30th International Conference on the Physics of Semiconductors (ICPS-30), Seoul, South Korea, (477-478). 25-30 July 2010. doi:10.1063/1.3666461

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Author Jackson, H. E.
Montazeri, M.
Fickenscher, M.
Smith, L. M.
Yarrison-Rice, J. M.
Kang, J. H.
Gao, Q.
Tan, H. H.
Jagadish, C.
Guo, Y.
Zou, J.
Pistol, M. E.
Pryor, C. E.
Title of paper Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires
Conference name 30th International Conference on the Physics of Semiconductors (ICPS-30)
Conference location Seoul, South Korea
Conference dates 25-30 July 2010
Proceedings title Physics of Semiconductors: 30th International Conference On the Physics of Semiconductors   Check publisher's open access policy
Journal name AIP Conference Proceedings   Check publisher's open access policy
Place of Publication Melville, NY, United States
Publisher A I P Publishing
Publication Year 2011
Year available 2011
Sub-type Fully published paper
DOI 10.1063/1.3666461
Open Access Status File (Publisher version)
ISBN 9780735410022
ISSN 0094-243X
Editor Ihm, J
Cheong, H
Volume 1399
Start page 477
End page 478
Total pages 2
Language eng
Abstract/Summary We have studied core-shell nanowires with widely different core and shell lattice constants, namely GaAs core with GaP shell nanowires. We use Raman scattering to probe strain in these nanowires and relate this strain to the observed photoluminescence. The Raman and photoluminescence measurements are in agreement with 8 band k.p calculations for these structures. These results suggest that the electronic properties of core-shall nanowires can be tuned over a wide range by using the strain generated by growing core/shell materials with different lattice constants and different core/shell thicknesses.
Q-Index Code E1
Q-Index Status Provisional Code
Grant ID DMR-0806700
Institutional Status UQ

Document type: Conference Paper
Sub-type: Fully published paper
Collection: School of Mechanical & Mining Engineering Publications
 
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Created: Mon, 13 Nov 2017, 06:40:35 EST