Single-crystalline 3C-SiC anodically bonded onto glass: an excellent platform for high-temperature electronics and bioapplications

Phan, Hoang-Phuong, Cheng, Han-Hao, Dinh, Toan, Wood, Barry, Nguyen, Tuan-Khoa, Mu, Fengwen, Kamble, Harshad, Vadivelu, Raja, Walker, Glenn, Hold, Leonie, Iacopi, Alan, Haylock, Ben, Dao, Dzung Viet, Lobino, Mirko, Suga, Tadatomo and Nguyen, Nam-Trung (2017) Single-crystalline 3C-SiC anodically bonded onto glass: an excellent platform for high-temperature electronics and bioapplications. ACS Applied Materials and Interfaces, 9 33: 27365-27371. doi:10.1021/acsami.7b06661


Author Phan, Hoang-Phuong
Cheng, Han-Hao
Dinh, Toan
Wood, Barry
Nguyen, Tuan-Khoa
Mu, Fengwen
Kamble, Harshad
Vadivelu, Raja
Walker, Glenn
Hold, Leonie
Iacopi, Alan
Haylock, Ben
Dao, Dzung Viet
Lobino, Mirko
Suga, Tadatomo
Nguyen, Nam-Trung
Title Single-crystalline 3C-SiC anodically bonded onto glass: an excellent platform for high-temperature electronics and bioapplications
Journal name ACS Applied Materials and Interfaces   Check publisher's open access policy
ISSN 1944-8244
1944-8252
Publication date 2017-08-23
Year available 2017
Sub-type Article (original research)
DOI 10.1021/acsami.7b06661
Open Access Status Not yet assessed
Volume 9
Issue 33
Start page 27365
End page 27371
Total pages 7
Place of publication Washington, DC, United States
Publisher American Chemical Society
Language eng
Subject 2500 Materials Science
Abstract Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction at high temperatures and visible-light absorption of the Si substrate are main obstacles hindering the use of the platform in a broad range of applications. To solve these bottlenecks, we present a new platform of single crystal SiC on an electrically insulating and transparent substrate using an anodic bonding process. The SiC thin film was prepared on a 150 mm Si with a surface roughness of 7 nm using LPCVD. The SiC/Si wafer was bonded to a glass substrate and then the Si layer was completely removed through wafer polishing and wet etching. The bonded SiC/glass samples show a sharp bonding interface of less than 15 nm characterized using deep profile X-ray photoelectron spectroscopy, a strong bonding strength of approximately 20 MPa measured from the pulling test, and relatively high optical transparency in the visible range. The transferred SiC film also exhibited good conductivity and a relatively high temperature coefficient of resistance varying from -12000 to -20 000 ppm/K, which is desirable for thermal sensors. The biocompatibility of SiC/glass was also confirmed through mouse 3T3 fibroblasts cell-culturing experiments. Taking advantage of the superior electrical properties and biocompatibility of SiC, the developed SiC-on-glass platform offers unprecedented potentials for high-temperature electronics as well as bioapplications.
Keyword Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Science & Technology - Other Topics
Materials Science
Q-Index Code C1
Q-Index Status Provisional Code
Grant ID LP150100153
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: HERDC Pre-Audit
Australian Institute for Bioengineering and Nanotechnology Publications
 
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Created: Wed, 13 Sep 2017, 23:21:12 EST by Dr Elliot Cheng on behalf of Aust Institute for Bioengineering & Nanotechnology