The 3-D Structure of Polycrystalline Diamond Film by Electron Backscattering Diffraction (EBSD)

Chen, Hon-Wen and Rudolph, Victor (2003). The 3-D Structure of Polycrystalline Diamond Film by Electron Backscattering Diffraction (EBSD). In: Diamond and Related Materials: Proceedings of the Eighth International Conference on New Diamond Science and Technology; Diamond and Related Materials; 8th International Conference New Diamond Science and Technology (ICNDST-8 ). Proceedings of the Eighth International Conference on New Diamond Science and Technology; Diamond and Related Materials; 8th International Conference New Diamond Science and Technology (ICNDST-8 ), University of Melbourne, Victoria, Australia, (1633-1639). 21-26 July, 2002. doi:10.1016/S0925-9635(03)00187-0


Author Chen, Hon-Wen
Rudolph, Victor
Title of paper The 3-D Structure of Polycrystalline Diamond Film by Electron Backscattering Diffraction (EBSD)
Conference name Proceedings of the Eighth International Conference on New Diamond Science and Technology; Diamond and Related Materials; 8th International Conference New Diamond Science and Technology (ICNDST-8 )
Conference location University of Melbourne, Victoria, Australia
Conference dates 21-26 July, 2002
Proceedings title Diamond and Related Materials: Proceedings of the Eighth International Conference on New Diamond Science and Technology; Diamond and Related Materials; 8th International Conference New Diamond Science and Technology (ICNDST-8 )   Check publisher's open access policy
Journal name Diamond and Related Materials   Check publisher's open access policy
Place of Publication Switzerland
Publisher Diamond and Related Materials
Publication Year 2003
Sub-type Fully published paper
DOI 10.1016/S0925-9635(03)00187-0
ISSN 0925-9635
Volume 12
Issue 10-11
Start page 1633
End page 1639
Total pages 7
Language eng
Abstract/Summary A lithographic method was used to produce polycrystalline diamond films having highly defined surface geometry, showing an array of diamond tips for possible application as a field emitter device. The films grown in this study used microwave plasma assisted chemical vapour deposition (MACVD) on a silicon substrate; the substrate was then dissolved away to reveal the surface features on the diamond film. It is possible to align the crystallite direction and affect the electron emission properties using a voltage bias to enhance the nucleation process and influence the nuclei to a preferred orientation. This study focuses on the identification of the distribution of crystal directions in the film, using electron backscattering diffraction (EBSD) to identify the crystallographic character of the film surface. EBSD allows direct examination of the individual diamond grains, grains boundaries and the crystal orientation of each individual crystallite. The EBSD maps of the bottom (nucleation side) of the films, following which a layer of film is ion-milled away and the mapping process repeated. The method demonstrates experimentally that oriented nucleation occurs and the thin sections allow the crystal texture to be reconstructed in 3-D. (C) 2003 Elsevier B.V. All rights reserved.
Subjects C1
290600 Chemical Engineering
670799 Other
090904 Navigation and Position Fixing
090499 Chemical Engineering not elsewhere classified
Keyword Materials Science, Multidisciplinary
Diamond Films
Crystal Orientation
Ebsd
Chemical-vapor-deposition
Nucleation
Growth
Silicon
Cvd
Field
Q-Index Code C1

 
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Created: Wed, 15 Aug 2007, 12:53:45 EST