Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

Visitserngtrakul S., Krause S.J. and Barry J.C. (1991) Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material. Journal of Materials Research, 6 4: 792-795. doi:10.1557/JMR.1991.0792


Author Visitserngtrakul S.
Krause S.J.
Barry J.C.
Title Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material
Journal name Journal of Materials Research   Check publisher's open access policy
ISSN 2044-5326
Publication date 1991-01-01
Sub-type Article (original research)
DOI 10.1557/JMR.1991.0792
Open Access Status Not yet assessed
Volume 6
Issue 4
Start page 792
End page 795
Total pages 4
Language eng
Subject 2500 Materials Science
3104 Condensed Matter Physics
2211 Mechanics of Materials
2210 Mechanical Engineering
Abstract Conventional and high resolution electron microscopy (HREM) were used to study the structure of {113} defects in high-dose oxygen implanted silicon. The defects are created with a density of 10 cm below the buried oxide layer in the substrate region. The HREM images of the {113} defects are similar to the ribbon-like defects in bulk silicon. It is proposed that there is a third possible structure of the defects, in addition to coesite and/or hexagonal structures. Portions of some defects exhibit the original cubic diamond structure which is twinned across {115} planes. The atomic model shows that the {115} interface is a coherent interface with alternating five and seven-membered rings and no dangling bonds.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Created: Tue, 25 Jul 2017, 00:03:52 EST by System User