Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material

Visitserngtrakul S., Krause S.J. and Barry J.C. (1991) Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material. Journal of Materials Research, 6 4: 792-795. doi:10.1557/JMR.1991.0792


Author Visitserngtrakul S.
Krause S.J.
Barry J.C.
Title Structure of twinned {113} defects in high-dose oxygen implanted silicon-on-insulator material
Journal name Journal of Materials Research   Check publisher's open access policy
ISSN 2044-5326
Publication date 1991-01-01
Sub-type Article (original research)
DOI 10.1557/JMR.1991.0792
Volume 6
Issue 4
Start page 792
End page 795
Total pages 4
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Created: Tue, 25 Jul 2017, 00:03:52 EST by System User