New high-pressure phase of GaAsO4: Implications for shape-memory materials

Clark, SM, Christy, AG, Jones, R, Chen, J, Thomas, JM and Greaves, GN (1995) New high-pressure phase of GaAsO4: Implications for shape-memory materials. Physical Review B, 51 1: 38-44. doi:10.1103/PhysRevB.51.38


Author Clark, SM
Christy, AG
Jones, R
Chen, J
Thomas, JM
Greaves, GN
Title New high-pressure phase of GaAsO4: Implications for shape-memory materials
Journal name Physical Review B   Check publisher's open access policy
ISSN 0163-1829
Publication date 1995-01-01
Sub-type Article (original research)
DOI 10.1103/PhysRevB.51.38
Volume 51
Issue 1
Start page 38
End page 44
Total pages 7
Language eng
Subject 3104 Condensed Matter Physics
Abstract The effect of pressure on the crystal structure of GaAsO4 has been studied using energy-dispersive powder diffraction up to 19.7 GPa. A structural phase transition was observed between 6.3 and 9.5 GPa from the ambient hexagonal structure to a triclinic structure. A model for this new high-pressure phase is presented. The low- and high-pressure phases were found to have bulk moduli of 17.6 and 177.0 GPa, respectively. The phase transition is reversible and first order with a volume discontinuity of 8%. The implications for the related shape-memory materials are discussed.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
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