N-type Bi-doped PbTe nanocubes with enhanced thermoelectric performance

Yang, Lei, Chen, Zhi-Gang, Hong, Min, Wang, Lihua, Kong, Deli, Huang, Liqing, Han, Guang, Zou, Yichao, Dargusch, Matthew and Zou, Jin (2017) N-type Bi-doped PbTe nanocubes with enhanced thermoelectric performance. Nano Energy, 31 105-112. doi:10.1016/j.nanoen.2016.11.027

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Author Yang, Lei
Chen, Zhi-Gang
Hong, Min
Wang, Lihua
Kong, Deli
Huang, Liqing
Han, Guang
Zou, Yichao
Dargusch, Matthew
Zou, Jin
Title N-type Bi-doped PbTe nanocubes with enhanced thermoelectric performance
Journal name Nano Energy
ISSN 2211-2855
2211-3282
Publication date 2017-01-01
Year available 2016
Sub-type Article (original research)
DOI 10.1016/j.nanoen.2016.11.027
Open Access Status File (Author Post-print)
Volume 31
Start page 105
End page 112
Total pages 8
Place of publication Amsterdam, Netherlands
Publisher Elsevier BV
Language eng
Subject 2105 Renewable Energy, Sustainability and the Environment
2500 Materials Science
2208 Electrical and Electronic Engineering
Abstract In this study, Bi was selected to dope PbTe nanocubes to develop high performance n-type PbTe-based thermoelectric materials via nanostructure engineering using a facile solvothermal method. Bi dopants effectively improve the electrical transport properties of the as-sintered PbTe nanomaterials by tuning the carrier concentrations, achieving promising electrical conductivity and Seebeck coefficient which are comparable to bulk materials. Moreover, a low lattice thermal conductivity has been secured in the sintered Bi-doped PbTe nanomaterials, which is remarkably lower than its bulk counterparts. Extensive experimental and theoretical evidences reveal that such low lattice thermal conductivity is attributed to the enhanced phonon scattering by the high density of grain boundaries and dislocations, in turn, leading to an enhanced peak ZT similar to 1.35 at 675 K for n-type Pb0.99Bi0.01Te.
Formatted abstract
In this study, Bi was selected to dope PbTe nanocubes to develop high performance n-type PbTe-based thermoelectric materials via nanostructure engineering using a facile solvothermal method. Bi dopants effectively improve the electrical transport properties of the as-sintered PbTe nanomaterials by tuning the carrier concentrations, achieving promising electrical conductivity and Seebeck coefficient which are comparable to bulk materials. Moreover, a low lattice thermal conductivity has been secured in the sintered Bi-doped PbTe nanomaterials, which is remarkably lower than its bulk counterparts. Extensive experimental and theoretical evidences reveal that such low lattice thermal conductivity is attributed to the enhanced phonon scattering by the high density of grain boundaries and dislocations, in turn, leading to an enhanced peak ZT~1.35 at 675 K for n-type Pb0.99Bi0.01Te.
Keyword Bi-doped PbTe
N-type
Nanostructure engineering
Thermoelectric
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
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Centre for Microscopy and Microanalysis Publications
 
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