Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3-xClx/FTO structure

Yoo, Eunji, Lyu, Miaoqiang, Yun, Jung-Ho, Kang, Chijung, Choi, Youngjin and Wang, Lianzhou (2016) Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3-xClx/FTO structure. Journal of Materials Chemistry C, 4 33: 7824-7830. doi:10.1039/c6tc02503j


Author Yoo, Eunji
Lyu, Miaoqiang
Yun, Jung-Ho
Kang, Chijung
Choi, Youngjin
Wang, Lianzhou
Title Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3-xClx/FTO structure
Formatted title
Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3-xClx/FTO structure
Journal name Journal of Materials Chemistry C   Check publisher's open access policy
ISSN 2050-7526
2050-7534
Publication date 2016-09-07
Sub-type Article (original research)
DOI 10.1039/c6tc02503j
Open Access Status Not yet assessed
Volume 4
Issue 33
Start page 7824
End page 7830
Total pages 7
Place of publication Cambridge, United Kingdom
Publisher Royal Society of Chemistry
Language eng
Formatted abstract
Organolead halide perovskite materials open up a new era for developing low-cost and high efficiency solar cells due to their simple and inexpensive fabrication process, superior light absorption coefficient, and excellent charge mobility. In addition to solar cells, hybrid perovskites have also seen dynamic advances with rapidly expanded applications to many other exciting fields including electronic and optical devices. Here, we demonstrate a new type of bifunctional resistive switching memory device based on a very simple bilayer structure of Ag and a CH3NH3PbI3−xClx perovskite material on an FTO substrate with both digital and analog resistive switching characteristics. The bi-stable resistive switching behavior with reliable endurance over 103 times and a retention time of 4 × 104 s demonstrates that the Ag/CH3NH3PbI3−xClx/FTO device can be a promising candidate for RRAM. In the low voltage sweeping region, surprisingly, analog resistive switching behavior with potentiation and depression characteristics was also observed, which can be useful in neuromorphic computing device applications. The possible Ag conducting filaments formed by redox reactions of the Ag electrode may play a key role in this newly observed resistive switching phenomenon.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Chemical Engineering Publications
HERDC Pre-Audit
Australian Institute for Bioengineering and Nanotechnology Publications
 
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