Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets

Zhang, Enze, Wang, Peng, Li, Zhe, Wang, Haifeng, Song, Chaoyu, Huang, Ce, Chen, Zhi-Gang, Yang, Lei, Zhang, Kaitai, Lu, Shiheng, Wang, Weiyi, Liu, Shanshan, Fang, Hehai, Zhou, Xiaohao, Yang, Hugen, Zou, Jin, Wan, Xiangang, Zhou, Peng, Hu, Weida and Xiu, Faxian (2016) Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets. ACS Nano, 10 8: 8067-8077. doi:10.1021/acsnano.6b04165


Author Zhang, Enze
Wang, Peng
Li, Zhe
Wang, Haifeng
Song, Chaoyu
Huang, Ce
Chen, Zhi-Gang
Yang, Lei
Zhang, Kaitai
Lu, Shiheng
Wang, Weiyi
Liu, Shanshan
Fang, Hehai
Zhou, Xiaohao
Yang, Hugen
Zou, Jin
Wan, Xiangang
Zhou, Peng
Hu, Weida
Xiu, Faxian
Title Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets
Journal name ACS Nano   Check publisher's open access policy
ISSN 1936-086X
1936-0851
Publication date 2016-08-23
Year available 2016
Sub-type Article (original research)
DOI 10.1021/acsnano.6b04165
Open Access Status Not yet assessed
Volume 10
Issue 8
Start page 8067
End page 8077
Total pages 11
Place of publication Washington, DC, United States
Publisher American Chemical Society
Language eng
Subject 2500 Materials Science
2200 Engineering
3100 Physics and Astronomy
Abstract Atomically thin 2D-layered transition-metal dichalcogenides have been studied extensively in recent years because of their intriguing physical properties and promising applications in nanoelectronic devices. Among them, ReSe2 is an emerging material that exhibits a stable distorted IT phase and strong in-plane anisotropy due to its reduced crystal symmetry. Here, the anisotropic nature of ReSe2 is revealed by Raman spectroscopy under linearly polarized excitations in which different vibration modes exhibit pronounced periodic variations in intensity. Utilizing high-quality ReSe2 nanosheets, top-gate ReSe2 field-effect transistors were built that show an excellent on/off current ratio exceeding 10(7) and a well-developed current saturation in the current voltage characteristics at room temperature. Importantly, the successful synthesis of ReSe2 directly onto hexagonal boron nitride substrates has effectively improved the electron motility over 500 times and the hole mobility over 100 times at low temperatures. Strikingly, corroborating with our density-functional calculations, the ReSe2-based photodetectors exhibit a polarization sensitive photoresponsivity due to the intrinsic linear dichroism originated from high in-plane optical anisotropy. With a back-gate voltage, the linear dichroism photodetection can be unambiguously tuned both in the electron and hole regime. The appealing physical properties demonstrated in this study clearly identify ReSe2 as a highly anisotropic 2D material for exotic electronic and optoelectronic applications.
Formatted abstract
Atomically thin 2D-layered transition-metal dichalcogenides have been studied extensively in recent years because of their intriguing physical properties and promising applications in nanoelectronic devices. Among them, ReSe2 is an emerging material that exhibits a stable distorted 1T phase and strong in-plane anisotropy due to its reduced crystal symmetry. Here, the anisotropic nature of ReSe2 is revealed by Raman spectroscopy under linearly polarized excitations in which different vibration modes exhibit pronounced periodic variations in intensity. Utilizing high-quality ReSe2 nanosheets, top-gate ReSe2 field-effect transistors were built that show an excellent on/off current ratio exceeding 107 and a well-developed current saturation in the current-voltage characteristics at room temperature. Importantly, the successful synthesis of ReSe2 directly onto hexagonal boron nitride substrates has effectively improved the electron motility over 500 times and the hole mobility over 100 times at low temperatures. Strikingly, corroborating with our density-functional calculations, the ReSe2-based photodetectors exhibit a polarization-sensitive photoresponsivity due to the intrinsic linear dichroism originated from high in-plane optical anisotropy. With a back-gate voltage, the linear dichroism photodetection can be unambiguously tuned both in the electron and hole regime. The appealing physical properties demonstrated in this study clearly identify ReSe2 as a highly anisotropic 2D material for exotic electronic and optoelectronic applications.
Keyword Ambipolar
Anisotropy
Linear dichroism photodetection
ReSe2
Q-Index Code C1
Q-Index Status Provisional Code
Grant ID 61322407
14JC1406400
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
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