Photoelectrochemical Cells with n-CdTe

Rakhshani A.E. and Lyons L.E. (1982) Photoelectrochemical Cells with n-CdTe. Australian Journal of Chemistry, 35 10: 1949-1959. doi:10.1071/CH9821949


Author Rakhshani A.E.
Lyons L.E.
Title Photoelectrochemical Cells with n-CdTe
Journal name Australian Journal of Chemistry   Check publisher's open access policy
ISSN 1445-0038
Publication date 1982-01-01
Sub-type Article (original research)
DOI 10.1071/CH9821949
Open Access Status
Volume 35
Issue 10
Start page 1949
End page 1959
Total pages 11
Subject 1600 Chemistry
Abstract The opto-electrical behaviour of single crystal n-type CdTe in aqueous solutions containing several redox couples Sn2 +, 4+, Fe2+, 3 + and Fe(CN)6 3-, 4- in the dark and under irradiation is described. The minority carrier diffusion length was 0.13 μm from a combination of results on photocurrents and capacitance. The dopant concentration was 1·4 ×1017cm-3 from Mott-Schottky plots. In the cdTe-Sn2+, 4+system the photovoltaic properties of the junction depended on the state of charge injection into the interface region. We distinguished between a 'high state' and a 'low state' where in the 'high state' both the open circuit photovoltage and the fill factor were approximately twice as large as in the 'low state'. Possibilities for a difference in the value of the built-in potential obtained from the photocurrent method and from a Mott-Schottky plot are described. The built-in potential (or the flat-band potential) was independent of the redox potential, an effect which is analogous to Fermi-level pinning. The empirical relationship between barrier height and band gap in a Fermi-level pinned junction held for our system.
Q-Index Code C1
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Created: Tue, 13 Sep 2016, 11:12:18 EST by System User