Preparation and properties of CdS/CdTe thin film solar cell produced by periodic pulse electrodeposition technique

Das S.K. and Morris G.C. (1993) Preparation and properties of CdS/CdTe thin film solar cell produced by periodic pulse electrodeposition technique. Solar Energy Materials and Solar Cells, 30 2: 107-118. doi:10.1016/0927-0248(93)90012-R


Author Das S.K.
Morris G.C.
Title Preparation and properties of CdS/CdTe thin film solar cell produced by periodic pulse electrodeposition technique
Journal name Solar Energy Materials and Solar Cells   Check publisher's open access policy
ISSN 0927-0248
Publication date 1993-01-01
Sub-type Article (original research)
DOI 10.1016/0927-0248(93)90012-R
Open Access Status Not yet assessed
Volume 30
Issue 2
Start page 107
End page 118
Total pages 12
Subject 2105 Renewable Energy, Sustainability and the Environment
2504 Electronic, Optical and Magnetic Materials
2508 Surfaces, Coatings and Films
2200 Engineering
Abstract CdS/CdTe solar cells have been prepared by periodic pulse electrodepositionmethod. 10.8% efficient cell was made with open circuit voltage (Voc)≈753mV, short-circuit current (Jsc)≈23.6 mA/cm2 and fill factor (FF)≈0.61. Current-voltage-temperature measurments showed the variation of ideality factor (A) from 1.88 at 344 K to 4.49 at 202 K whereas voltage factor (α) was almost constant above 276 K. The junction transport is possibly dominated by a tunneling mechanism. Capacitance measurements gave the value of diffusion potential as 1.2 eV, ionized charged density as 5.9 × 1015 cm-3 and number of interface states (NIS) as 2.8 × 1011 cm-2 eV-1 at zero volt bias. Measurements of open circuit voltage (Voc) with temperature gave the value of barrier height as 1.42 eV.
Q-Index Code C1
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Created: Tue, 13 Sep 2016, 10:30:11 EST by System User