Method for Characterization of Intrinsic and Extrinsic Components of Semiconductor Laser Diode Circuit Model

Majewski M.L. and Novak D. (1991) Method for Characterization of Intrinsic and Extrinsic Components of Semiconductor Laser Diode Circuit Model. IEEE Microwave and Guided Wave Letters, 1 9: 246-248. doi:10.1109/75.84602


Author Majewski M.L.
Novak D.
Title Method for Characterization of Intrinsic and Extrinsic Components of Semiconductor Laser Diode Circuit Model
Journal name IEEE Microwave and Guided Wave Letters   Check publisher's open access policy
ISSN 1051-8207
Publication date 1991-01-01
Year available 1991
Sub-type Article (original research)
DOI 10.1109/75.84602
Open Access Status
Volume 1
Issue 9
Start page 246
End page 248
Total pages 3
Publisher WILEY
Language eng
Subject 2200 Engineering
3100 Physics and Astronomy
Abstract It is shown that measurements of intensity noise, small-signal modulation response and input reflection coefficients of a semiconductor laser diode can be used to characterize the intrinsic and extrinsic parameters of the laser. These measurements, combined with the analytical expressions presented here enable one to determine the intrinsic 3 dB-modulation bandwidth and the extrinsic parasitic components associated with the laser diode that generally introduce modulation bandwidth limitation.
Keyword Microscopy
Microscopy
MICROSCOPY
Q-Index Code C1
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Scopus Citation Count Cited 17 times in Scopus Article | Citations
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