Microwave Propagation in Rectangular Waveguide Containing a Semiconductor Subject to a Transverse Magnetic Field

Ness J.B. and Gunn M.W. (1975) Microwave Propagation in Rectangular Waveguide Containing a Semiconductor Subject to a Transverse Magnetic Field. IEEE Transactions on Microwave Theory and Techniques, 23 9: 767-772. doi:10.1109/TMTT.1975.1128673


Author Ness J.B.
Gunn M.W.
Title Microwave Propagation in Rectangular Waveguide Containing a Semiconductor Subject to a Transverse Magnetic Field
Journal name IEEE Transactions on Microwave Theory and Techniques
ISSN 1557-9670
Publication date 1975-01-01
Sub-type Article (original research)
DOI 10.1109/TMTT.1975.1128673
Volume 23
Issue 9
Start page 767
End page 772
Total pages 6
Subject 2208 Electrical and Electronic Engineering
3104 Condensed Matter Physics
3108 Radiation
Abstract The propagation constant of waveguide partially loaded with a semiconductor in the H plane is evaluated using a three-mode approximation analysis. As the waveguide is progressively filled, a large peak occurs in the attenuation coefficient due to higher order mode propagation. In the presence of a transverse magnetic field, propagation becomes nonreciprocal and this nonreciprocal effect is shown to be significantly increased in the region of the peak. The theoretical results are verified using n-type germanium samples in 26.5-40-GHz waveguide. Copyright
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Scopus Citation Count Cited 5 times in Scopus Article | Citations
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