Interfacial microstructure of InxGa1-xAs/GaAs strained layers

Yao J.Y., Andersson T.G. and Dunlop G.L. (1995) Interfacial microstructure of InxGa1-xAs/GaAs strained layers. Materials Science Forum, 189-190 285-290.

Author Yao J.Y.
Andersson T.G.
Dunlop G.L.
Title Interfacial microstructure of InxGa1-xAs/GaAs strained layers
Journal name Materials Science Forum   Check publisher's open access policy
ISSN 0255-5476
Publication date 1995-01-01
Sub-type Article (original research)
Open Access Status Not yet assessed
Volume 189-190
Start page 285
End page 290
Total pages 6
Publisher Trans Tech Publ
Language eng
Subject 2500 Materials Science
Abstract The topography and defect structure of interfaces in InGaAs/GaAs strained-layer structures grown by molecular beam epitaxy were investigated by transmission electron microscopy. A large range of indium fractions, x, was investigated: 0.16 ≥ x ≥ 1.00, and three different critical layer thicknesses, corresponding to the formation of three different types of defects, were observed with increasing thicknesses of the strained layers. These defects were: rough interfacial topographies resulting from an onset of 3-dimensional growth for the InGaAs layers; misfit dislocations of the 60° mixed type; and dislocation complexes consisting of planar defects on {111} planes. Compared with results obtained from photoluminescence measurements it was found that both types of defects involving dislocations resulted in severe degradation of the optical properties of the strained-layer structures.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
 
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Created: Tue, 12 Jul 2016, 12:15:26 EST by System User