Third-Order Intermodulation Distortion and Gain Compression in GaAs FET's

Tucker R.S. (1979) Third-Order Intermodulation Distortion and Gain Compression in GaAs FET's. IEEE Transactions on Microwave Theory and Techniques, 27 5: 400-408. doi:10.1109/TMTT.1979.1129640


Author Tucker R.S.
Title Third-Order Intermodulation Distortion and Gain Compression in GaAs FET's
Journal name IEEE Transactions on Microwave Theory and Techniques
ISSN 1557-9670
Publication date 1979-01-01
Sub-type Article (original research)
DOI 10.1109/TMTT.1979.1129640
Open Access Status Not yet assessed
Volume 27
Issue 5
Start page 400
End page 408
Total pages 9
Subject 2208 Electrical and Electronic Engineering
3104 Condensed Matter Physics
3108 Radiation
Abstract A simple unilateral nonlinear circuit model of a GaAs FET is used in the analysis of the third-order intermodulation distortion and gain compression characteristics of a single-stage amplifier. Expressions are obtained for these characteristics, relating them to the input power level and to the device load admittance. The expressions are illustrated with contours on the load admittance plane of constant intermodulation distortion ratio, intercept point, gain compression, AM-to-PM conversion, and output power, and as output power versus input power plots for fixed terminations. Agreement with experimentally measured distortion characteristics is good. Copyright
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Created: Sat, 09 Jul 2016, 16:34:50 EST by System User