Preparation and properties of undoped and copper doped zinc telluride films

Morris G.C. and Tanner P.G. (1991) Preparation and properties of undoped and copper doped zinc telluride films. Metals forum, 15 2: 179-184.

Author Morris G.C.
Tanner P.G.
Title Preparation and properties of undoped and copper doped zinc telluride films
Journal name Metals forum   Check publisher's open access policy
ISSN 0160-7952
Publication date 1991-01-01
Sub-type Article (original research)
Open Access Status Not yet assessed
Volume 15
Issue 2
Start page 179
End page 184
Total pages 6
Language eng
Subject 2200 Engineering
Abstract Zinc telluride films have been prepared by compound evaporation onto borosilicate glass, onto a 20 nm layer of copper atoms on borosilicate glass and by co-evaporation with copper. Properties of these films are described. The starting material must be heat-treated in vacuum to remove oxides which coat the surface of the as-received 99.999% pure powder. Otherwise, the zinc telluride films have excess tellurium. The stoichiometry, resistivity, optical properties and morphology of films prepared at various substrate temperatures are reported. Resistivities can be varied from about 10 Ω cm to about 10 Ω cm by appropriate doping.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Created: Tue, 05 Jul 2016, 12:37:41 EST by System User