An Analytical DC Model for the Modulation-doped Field-Effect Transistor

Majewski M.L. (1987) An Analytical DC Model for the Modulation-doped Field-Effect Transistor. IEEE Transactions on Electron Devices, 34 9: 1902-1910. doi:10.1109/T-ED.1987.23174

Author Majewski M.L.
Title An Analytical DC Model for the Modulation-doped Field-Effect Transistor
Journal name IEEE Transactions on Electron Devices
ISSN 1557-9646
Publication date 1987-01-01
Sub-type Article (original research)
DOI 10.1109/T-ED.1987.23174
Open Access Status Not yet assessed
Volume 34
Issue 9
Start page 1902
End page 1910
Total pages 9
Subject 2208 Electrical and Electronic Engineering
2504 Electronic, Optical and Magnetic Materials
3101 Physics and Astronomy (miscellaneous)
Abstract A novel analytical dc model for the MODFET device is introduced. The model is based on the approximate equations obtained for the 2DEG charge density under the equilibrium and current conduction conditions. The electron charge mobility and velocity-electric field characteristics in the device channel are modeled using semi-empirical expressions in order to obtain the current-voltage drain characteristics that are related directly to the physical parameters of the device structure and its ambient temperature. The calculated current-voltage characteristics using the developed model compare well with the experimental results obtained for a low-noise microwave MODFET at different temperatures. It is believed that due to the model simplicity, it is suitable for implementation in the existing microwave CAD packages. Copyright
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
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Citation counts: TR Web of Science Citation Count  Cited 21 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 23 times in Scopus Article | Citations
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