Evaluation of the surface photovoltage method of minority-carrier diffusion-length measurement

Alam M.K. and Yeow Y.T. (1981) Evaluation of the surface photovoltage method of minority-carrier diffusion-length measurement. Solid State Electronics, 24 12: 1117-1119. doi:10.1016/0038-1101(81)90179-9


Author Alam M.K.
Yeow Y.T.
Title Evaluation of the surface photovoltage method of minority-carrier diffusion-length measurement
Journal name Solid State Electronics   Check publisher's open access policy
ISSN 0038-1101
Publication date 1981-01-01
Sub-type Article (original research)
DOI 10.1016/0038-1101(81)90179-9
Volume 24
Issue 12
Start page 1117
End page 1119
Total pages 3
Subject 2208 Electrical and Electronic Engineering
2504 Electronic, Optical and Magnetic Materials
3104 Condensed Matter Physics
Abstract The surface photovoltage (SPV) method of semiconductor minority carrier diffusion length measurement is simulated numerically by solving the semiconductor equations under monochromatic illumination. It is shown that the extracted diffusion length is dependent on the SPV level and the initial surface potential. This dependence arises because of carrier generation in the surface space charge region. For the p-type silicon investigated, the extracted diffusion length is found to be within 10% of the actual value even when the assumption of low level injection is violated.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Created: Tue, 14 Jun 2016, 17:02:32 EST by System User