A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures

Oh S.-J. and Yeow Y.T. (1988) A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures. Solid State Electronics, 31 6: 1113-1118. doi:10.1016/0038-1101(88)90414-5


Author Oh S.-J.
Yeow Y.T.
Title A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures
Journal name Solid State Electronics   Check publisher's open access policy
ISSN 0038-1101
Publication date 1988-01-01
Sub-type Article (original research)
DOI 10.1016/0038-1101(88)90414-5
Volume 31
Issue 6
Start page 1113
End page 1118
Total pages 6
Subject 2208 Electrical and Electronic Engineering
2504 Electronic, Optical and Magnetic Materials
3104 Condensed Matter Physics
Abstract This paper presents a new computer modeling of Fowler-Nordheim (F-N) tunneling current from an inverted silicon surface to the metal gate of the thin oxide MOS structures. In this model the tunneling current through the oxide is taken to be proportional to the product of the gate oxide field and the inversion layer carrier concentration. Within the semiconductor the standard semiconductor equations are solved to ensure electron current at the semiconductor surface is equal to the tunneling current through the oxide. The computational results indicate that the current-voltage characteristics of the structure would saturate if it is limited by carrier generation in the space-charge region of the silicon. This is known from previous experimental results reported in the literature.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
Versions
Version Filter Type
Citation counts: Scopus Citation Count Cited 14 times in Scopus Article | Citations
Google Scholar Search Google Scholar
Created: Tue, 14 Jun 2016, 16:11:42 EST by System User