TWINNED GROWTH OF SILICON IN CHILL-MODIFIED Al-Si EUTECTIC.

Shamsuzzoha M. and Hogan L.M. (1987) TWINNED GROWTH OF SILICON IN CHILL-MODIFIED Al-Si EUTECTIC.. Journal of Crystal Growth, 82 4: 598-610. doi:10.1016/S0022-0248(87)80004-0


Author Shamsuzzoha M.
Hogan L.M.
Title TWINNED GROWTH OF SILICON IN CHILL-MODIFIED Al-Si EUTECTIC.
Journal name Journal of Crystal Growth   Check publisher's open access policy
ISSN 0022-0248
Publication date 1987-01-01
Sub-type Article (original research)
DOI 10.1016/S0022-0248(87)80004-0
Open Access Status Not yet assessed
Volume 82
Issue 4
Start page 598
End page 610
Total pages 13
Language eng
Subject 3104 Condensed Matter Physics
Abstract Electron diffraction studies of the silicon phase in chill-modified Al−Si eutectic have revealed a twin density higher than in unmodified flake eutectic silicon. The growth crystallography of the chill-modified silicon is closely similar to that of unmodified eutectic silicon but different from that in strontium-modified eutectic. It is concluded that the chill-modified eutectic is a refinement of the flake-silicon eutectic due to large undercooling whereas impurity-modified eutectic has been shown to have a different growth mechanism.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Created: Tue, 14 Jun 2016, 15:34:05 EST by System User