Four point probe Hall effect and resistivity measurements upon semiconductors

Green M.A. and Gunn M.W. (1972) Four point probe Hall effect and resistivity measurements upon semiconductors. Solid State Electronics, 15 5: 577-585. doi:10.1016/0038-1101(72)90159-1


Author Green M.A.
Gunn M.W.
Title Four point probe Hall effect and resistivity measurements upon semiconductors
Journal name Solid State Electronics   Check publisher's open access policy
ISSN 0038-1101
Publication date 1972-01-01
Sub-type Article (original research)
DOI 10.1016/0038-1101(72)90159-1
Volume 15
Issue 5
Start page 577
End page 585
Total pages 9
Subject 2208 Electrical and Electronic Engineering
2504 Electronic, Optical and Magnetic Materials
3104 Condensed Matter Physics
Abstract A solution is presented for the problem of calculating correction factors for four point probe Hall effect and resistivity measurements on rectangular semiconductor specimens based on the Corbino current image technique. In addition, a flexible numerical approach is used to verify the results obtained. This numerical approach allows four point probe measurements to be made upon specimens of both regular and arbitrary geometries.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import - Archived
 
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Created: Tue, 14 Jun 2016, 11:06:37 EST by System User