Controllable growth of vertical heterostructure GaTexSe1-x/Si by molecular beam epitaxy

Liu, Shanshan, Yuan, Xiang, Wang, Peng, Chen, Zhi-Gang, Tang, Lei, Zhang, Enze, Zhang, Cheng, Liu, Yanwen, Wang, Weiyi, Liu, Cong, Chen, Chen, Zou, Jin, Hu, Weida and Xiu, Faxian (2015) Controllable growth of vertical heterostructure GaTexSe1-x/Si by molecular beam epitaxy. ACS Nano, 9 8: 8592-8598. doi:10.1021/acsnano.5b03796


Author Liu, Shanshan
Yuan, Xiang
Wang, Peng
Chen, Zhi-Gang
Tang, Lei
Zhang, Enze
Zhang, Cheng
Liu, Yanwen
Wang, Weiyi
Liu, Cong
Chen, Chen
Zou, Jin
Hu, Weida
Xiu, Faxian
Title Controllable growth of vertical heterostructure GaTexSe1-x/Si by molecular beam epitaxy
Formatted title
Controllable growth of vertical heterostructure GaTexSe1-x/Si by molecular beam epitaxy
Journal name ACS Nano   Check publisher's open access policy
ISSN 1936-086X
1936-0851
Publication date 2015-08-25
Year available 2015
Sub-type Article (original research)
DOI 10.1021/acsnano.5b03796
Open Access Status Not Open Access
Volume 9
Issue 8
Start page 8592
End page 8598
Total pages 7
Place of publication Washington, DC United States
Publisher American Chemical Society
Language eng
Subject 2200 Engineering
2500 Materials Science
3100 Physics and Astronomy
Formatted abstract
Two dimensional (2D) alloys, especially transition metal dichalcogenides, have attracted intense attention owing to their band-gap tunability and potential optoelectrical applications. Here, we report the controllable synthesis of wafer-scale, few-layer GaTexSe1–x alloys (0 ≤ x ≤ 1) by molecular beam epitaxy (MBE). We achieve a layer-by-layer growth mode with uniform distribution of Ga, Te, and Se elements across 2 in. wafers. Raman spectroscopy was carried out to explore the composition-dependent vibration frequency of phonons, which matches well with the modified random-element-isodisplacement model. Highly efficient photodiode arrays were also built by depositing few-layer GaTe0.64Se0.36 on n-type Si substrates. These p–n junctions have steady rectification characteristics with a rectifying ratio exceeding 300 and a high external quantum efficiency around 50%. We further measured more devices on MBE-grown GaTexSe1–x/Si heterostructures across the full range to explore the composition-dependent external quantum efficiency. Our study opens a new avenue for the controllable growth of 2D alloys with wafer-scale homogeneity, which is a prominent challenge in 2D material research.
Keyword GaTexSe1-x
Two-dimensional alloy
Homogeneity
Molecular beam epitaxy
Q-Index Code C1
Q-Index Status Confirmed Code
Grant ID 61322407
J1103204
14JC1406400
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
Official 2016 Collection
 
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