Detection of chemically induced hot charge carriers with ultrathin metal film Schottky contacts

Nienhaus H., Gergen B., Weinberg W.H. and McFarland E.W. (2002). Detection of chemically induced hot charge carriers with ultrathin metal film Schottky contacts. In: 57th Yamada Conference on Atomic-Scale Surface Designing for Functional Low-Dimensional Materials, Tsukuba Japan, (172-181). Nov 14-16, 2001. doi:10.1016/S0039-6028(02)01625-4


Author Nienhaus H.
Gergen B.
Weinberg W.H.
McFarland E.W.
Title of paper Detection of chemically induced hot charge carriers with ultrathin metal film Schottky contacts
Conference name 57th Yamada Conference on Atomic-Scale Surface Designing for Functional Low-Dimensional Materials
Conference location Tsukuba Japan
Conference dates Nov 14-16, 2001
Journal name Surface Science   Check publisher's open access policy
Publication Year 2002
Sub-type Fully published paper
DOI 10.1016/S0039-6028(02)01625-4
Open Access Status Not yet assessed
ISSN 0039-6028
Volume 514
Issue 1-3
Start page 172
End page 181
Total pages 10
Language eng
Abstract/Summary Energy dissipation during chemical reactions at metal surfaces may excite electron-hole pairs in the metal. Direct detection of such reaction-induced hot electrons and holes is feasible using solid state barrier devices like Schottky diodes with ultrathin metal films. While exposing the diodes to reactive gases, a chemicurrent is observed in the diodes. The concept of hot charge carrier detection by chemicurrent measurements and the dependence of the current strength on device properties are discussed in detail. Data recorded from thin film Cu/n-Si(1 1 1) and Ag/n-Si(1 1 1) diodes exposed to atomic hydrogen and atomic oxygen are presented. The current detection sensitivity is improved by a factor of 10 if the metal films are annealed to room temperature after low-temperature deposition. This annealing effect is related to a reduced scattering of hot electrons in the metal. Chemicurrents are attenuated exponentially with increasing metal film thickness. Attenuation lengths between 6 and 11 nm are observed. They are much smaller than attenuation lengths for photo- and internal photoemission currents. The results demonstrate that chemicurrents are due to hot charge carrier excitation and transport and are not attributed to surface chemiluminescence and photon reabsorption in the device.
Subjects 1606 Political Science
3104 Condensed Matter Physics
3110 Surfaces and Interfaces
Keyword Contact
Metallic films
Schottky barrier
Surface chemical reaction
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Conference Paper
Collection: Scopus Import - Archived
 
Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 31 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 31 times in Scopus Article | Citations
Google Scholar Search Google Scholar
Created: Mon, 23 Jun 2014, 23:04:29 EST by System User