Chemically induced charge carrier production and transport in Pd/SiO2/n-Si(111) metal-oxide-semiconductor Schottky diodes

Cuenya, Beatriz Roldan, Nienhaus, Hermann and McFarland, Eric W. (2004) Chemically induced charge carrier production and transport in Pd/SiO2/n-Si(111) metal-oxide-semiconductor Schottky diodes. Physical Review B: covering condensed matter and materials physics, 70 . doi:10.1103/PhysRevB.70.115322

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Author Cuenya, Beatriz Roldan
Nienhaus, Hermann
McFarland, Eric W.
Title Chemically induced charge carrier production and transport in Pd/SiO2/n-Si(111) metal-oxide-semiconductor Schottky diodes
Formatted title
Chemically induced charge carrier production and transport in Pd/SiO2/n-Si(111) metal-oxide-semiconductor Schottky diodes
Journal name Physical Review B: covering condensed matter and materials physics   Check publisher's open access policy
ISSN 0163-1829
2469-9969
Publication date 2004-09-23
Sub-type Article (original research)
DOI 10.1103/PhysRevB.70.115322
Open Access Status File (Publisher version)
Volume 70
Total pages 7
Place of publication College Park, MD, United States
Publisher American Physical Society
Language eng
Abstract The energy transfer associated with reactions at metal surfaces produces energetic electrons and holes. Using ultrathin films of Pd on metal-semiconductor (MS) and metal-oxide-semiconductor (MOS) diode structures, we have investigated reaction-induced electrical phenomena associated with a variety of molecular and atomic interactions with the Pd surfaces. Distinct electronic signals are observable for species as diverse as atomic oxygen, xenon, and molecular hydrocarbons. Both MS and MOS devices allowed the detection of the chemically induced excitation of electron-hole pairs for highly exothermic chemisorption. Electronic signals from gas species with low adsorption energies were only observed in MOS devices with a thin oxide layer between the active metal film and the semiconductor. The density and distribution of interfacial states in the MOS devices have been found to be an important factor in understanding the origin and transport pathways of these "chemicurrents." A dynamic model is introduced to explain the displacement currents in the MOS devices during low-energy gas-surface interactions.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Chemical Engineering Publications
 
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