All solution-processed, hybrid light emitting field-effect transistors

Muhieddine, Khalid, Ullah, Mujeeb, Pal, Bhola N., Burn, Paul and Namdas, Ebinazar B. (2014) All solution-processed, hybrid light emitting field-effect transistors. Advanced Materials, 26 37: 6410-6415. doi:10.1002/adma.201400938

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Author Muhieddine, Khalid
Ullah, Mujeeb
Pal, Bhola N.
Burn, Paul
Namdas, Ebinazar B.
Title All solution-processed, hybrid light emitting field-effect transistors
Journal name Advanced Materials   Check publisher's open access policy
ISSN 0935-9648
Publication date 2014-10-08
Year available 2014
Sub-type Article (original research)
DOI 10.1002/adma.201400938
Open Access Status DOI
Volume 26
Issue 37
Start page 6410
End page 6415
Total pages 6
Place of publication Wiley - V C H Verlag
Publisher Weinheim, Germany
Language eng
Formatted abstract
All solution-processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.
Keyword Light emitting transistors
Metal oxides
Solution processed
Hybrid electronics
Q-Index Code C1
Q-Index Status Confirmed Code
Grant ID FT110100216
Institutional Status UQ

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Created: Fri, 06 Jun 2014, 19:58:16 EST by Mrs Louise Nimwegen on behalf of School of Mathematics & Physics