Microresonators with Q -factors over a million from highly stressed epitaxial silicon carbide on silicon

Kermany, Atieh R., Brawley, George, Mishra, Neeraj, Sheridan, Eoin, Bowen, Warwick P. and Iacopi, Francesca (2014) Microresonators with Q -factors over a million from highly stressed epitaxial silicon carbide on silicon. Applied Physics Letters, 104 8: . doi:10.1063/1.4866268


Author Kermany, Atieh R.
Brawley, George
Mishra, Neeraj
Sheridan, Eoin
Bowen, Warwick P.
Iacopi, Francesca
Title Microresonators with Q -factors over a million from highly stressed epitaxial silicon carbide on silicon
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2014-01-01
Year available 2014
Sub-type Article (original research)
DOI 10.1063/1.4866268
Open Access Status DOI
Volume 104
Issue 8
Total pages 5
Place of publication College Park, MD United States
Publisher American Institute of Physics Inc.
Collection year 2015
Language eng
Subject 3101 Physics and Astronomy (miscellaneous)
Abstract We utilize the excellent mechanical properties of epitaxial silicon carbide (SiC) on silicon plus the capability of tuning its residual stress within a large tensile range to fabricate microstrings with fundamental resonant frequencies (f0) of several hundred kHz and mechanical quality factors (Q) of over a million. The fabrication of the perfect-clamped string structures proceeds through simple silicon surface micromachining processes. The resulting f × Q product in vacuum is equal or higher as compared to state-of-the-art amorphous silicon nitride microresonators. We demonstrate that as the residual epitaxial SiC stress is doubled, the f × Q product for the fundamental mode of the strings shows a four-fold increase.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mathematics and Physics
Official 2015 Collection
 
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