Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Chen, Z. B., Lei, W., Chen, B., Wang, Y. B., Liao, X. Z., Tan, H. H., Zou, J., Ringer, S. P. and Jagadish, C. (2014) Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition. Applied Physics Letters, 104 2: 022108.1-022108.5. doi:10.1063/1.4859915

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Author Chen, Z. B.
Lei, W.
Chen, B.
Wang, Y. B.
Liao, X. Z.
Tan, H. H.
Zou, J.
Ringer, S. P.
Jagadish, C.
Title Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2014-01-13
Year available 2014
Sub-type Article (original research)
DOI 10.1063/1.4859915
Open Access Status File (Publisher version)
Volume 104
Issue 2
Start page 022108.1
End page 022108.5
Total pages 5
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Language eng
Subject 3101 Physics and Astronomy (miscellaneous)
Abstract Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.
Keyword Physics, Applied
Physics
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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