MOCVD-grown indium phosphide nanowires for optoelectronics

Paiman, Suriati, Gao, Qiang, Joyce, Hannah, Tan, Hark Hoe, Jagadish, Chennupati, Kim, Yong, Guo, Yanan, Pemasiri, Kuranananda, Montazeri, Mohammad, Jackson, Howard and Smith, Leigh (2014). MOCVD-grown indium phosphide nanowires for optoelectronics. In: Mohamad Hafiz Mamat, Zuraida Khusaimi, Suriani Abu Bakar, Asiah Mohd Nor, Tetsuo Soga and Mohamad Rusop Mahmood, Nanoscience, Nanotechnology and Nanoengineering. 2013 International Conference on Nanoscience and Nanotechnology, NANO-SciTech 2013, Shah Alam, Selangor, Malaysia, (201-205). 1-4 March 2013. doi:10.4028/

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Author Paiman, Suriati
Gao, Qiang
Joyce, Hannah
Tan, Hark Hoe
Jagadish, Chennupati
Kim, Yong
Guo, Yanan
Pemasiri, Kuranananda
Montazeri, Mohammad
Jackson, Howard
Smith, Leigh
Title of paper MOCVD-grown indium phosphide nanowires for optoelectronics
Conference name 2013 International Conference on Nanoscience and Nanotechnology, NANO-SciTech 2013
Conference location Shah Alam, Selangor, Malaysia
Conference dates 1-4 March 2013
Proceedings title Nanoscience, Nanotechnology and Nanoengineering   Check publisher's open access policy
Journal name Advanced Materials Research   Check publisher's open access policy
Series Advanced Materials Research
Place of Publication Zurich, Switzerland
Publisher Trans Tech
Publication Year 2014
Sub-type Fully published paper
DOI 10.4028/
Open Access Status Not yet assessed
ISBN 9783037859131
ISSN 1022-6680
Editor Mohamad Hafiz Mamat
Zuraida Khusaimi
Suriani Abu Bakar
Asiah Mohd Nor
Tetsuo Soga
Mohamad Rusop Mahmood
Volume 832
Start page 201
End page 205
Total pages 5
Language eng
Abstract/Summary We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quality indium phosphide (InP) nanowires suitable for optoelectronic device applications. Growth temperature, V/III ratio, and catalyst particle size have a significant effect on the morphology, crystallographic quality, and optical properties of the resulting nanowires. Significantly, we find that higher growth temperatures or higher V/III ratios promote the formation of wurtzite (WZ) nanowires while zinc-blende (ZB) nanowires are favourable at lower growth temperatures and lower V/III ratios. Results also show that InP nanowires grow preferably in the WZ crystal structure than the ZB crystal structure with increasing V/III ratio or decreasing diameter. This causes a blue-shift in the bandgap as growth temperature increases. These results show that careful control of growth temperature, V/III ratio and catalyst size are crucial for obtaining InP nanowires of a specific crystal structure needed for device applications.
Subjects 2200 Engineering
Keyword InP
V/III ratio
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

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