Thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures

Han, Guang, Chen, Zhi-Gang, Yang, Lei, Cheng, Lina, Jack, Kevin, Drennan, John and Zou, Jin (2013) Thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures. Applied Physics Letters, 103 26: 263105.1-263105.5. doi:10.1063/1.4857655

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Author Han, Guang
Chen, Zhi-Gang
Yang, Lei
Cheng, Lina
Jack, Kevin
Drennan, John
Zou, Jin
Title Thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures
Formatted title
Thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
1520-8842
Publication date 2013-12-23
Year available 2013
Sub-type Article (original research)
DOI 10.1063/1.4857655
Open Access Status File (Publisher version)
Volume 103
Issue 26
Start page 263105.1
End page 263105.5
Total pages 5
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Language eng
Abstract The thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures have been investigated. In-situ synchrotron X-ray diffraction in a sealed system reveals that In3Se4 has good thermal stability up to 900 degrees C. In contrast, In3Se4 has lower thermal stability up to 550 or 200 degrees C when heated in an atmosphere flushed with Ar or in air, respectively. The degradation mechanism was determined to be the oxidation of In3Se4 by O-2 in the heating environment. This research demonstrates how thermal processing conditions can influence the thermal stability of In3Se4, suggesting that appropriate heating environment for preserving its structural integrity is required. (C) 2013 AIP Publishing LLC.
Formatted abstract
The thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures have been investigated. In-situ synchrotron X-ray diffraction in a sealed system reveals that In3Se4 has good thermal stability up to 900 °C. In contrast, In3Se4 has lower thermal stability up to 550 or 200 °C when heated in an atmosphere flushed with Ar or in air, respectively. The degradation mechanism was determined to be the oxidation of In3Se4 by O2 in the heating environment. This research demonstrates how thermal processing conditions can influence the thermal stability of In3Se4, suggesting that appropriate heating environment for preserving its structural integrity is required.
Keyword Physics, Applied
Physics
PHYSICS, APPLIED
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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Created: Tue, 14 Jan 2014, 03:28:38 EST by Dr Kevin Jack on behalf of Materials