Reduction of thermal conductivity in dually doped ZnO by design of three-dimensional stacking faults

Takemoto, Hironao, Fugane, Keisuke, Yan, Pengfei, Drennan, John, Saito, Miwa, Mori, Toshiyuki and Yamamura, Hiroshi (2014) Reduction of thermal conductivity in dually doped ZnO by design of three-dimensional stacking faults. RSC Advances, 4 6: 2661-2672. doi:10.1039/c3ra44223c


Author Takemoto, Hironao
Fugane, Keisuke
Yan, Pengfei
Drennan, John
Saito, Miwa
Mori, Toshiyuki
Yamamura, Hiroshi
Title Reduction of thermal conductivity in dually doped ZnO by design of three-dimensional stacking faults
Journal name RSC Advances   Check publisher's open access policy
ISSN 2046-2069
Publication date 2014-01-01
Year available 2013
Sub-type Article (original research)
DOI 10.1039/c3ra44223c
Open Access Status Not Open Access
Volume 4
Issue 6
Start page 2661
End page 2672
Total pages 12
Place of publication Cambridge, United Kingdom
Publisher Royal Society of Chemistry
Language eng
Formatted abstract
A design paradigm for fabrication of high quality thermoelectric material was demonstrated by using wurtzite ZnO based materials. To prepare the three-dimensional stacking faults in the microstructure of ZnO, Ga2O3 and In2O3 which were guided by atomistic simulation were selected as doping oxides in wurtzite ZnO. TEM microanalysis experimentally confirmed two kinds of stacking faults which were along the basal-plane (i.e. {0001}) and pyramidal-plane (i.e. {10-14}) in the microstructure of ZnO dually doped with small amount of Ga2O3 and In2O3. Also, EDS analysis results indicated the dopant segregation effect at stacking faults which was predicted by our atomistic simulation results. By varying doping levels, it was found that the (Ga0.004, In0.004)Zn0.992O with dense three-dimensional stacking faults revealed low lattice thermal conductivity (1.7 W m-1 K-1 at 773 K) and high thermo-electric performance (ZT: 0.19 at 773 K) in the present work. Based on all experimental results, it is expected that the combined method of atomistic simulation, microanalysis and processing route design will provide us great opportunity for design of three-dimensional stacking faults in the microstructure of ZnO with high performance.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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