Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

Sun, Wen, Guo, Yanan, Xu, Hongyi, Gao, Qiang, Tan, Hark Hoe, Jagadish, Chennupati and Zou, Jin (2013) Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate. Applied Physics Letters, 103 22: 223104.1-223104.5. doi:10.1063/1.4834377

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Author Sun, Wen
Guo, Yanan
Xu, Hongyi
Gao, Qiang
Tan, Hark Hoe
Jagadish, Chennupati
Zou, Jin
Title Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2013-11-25
Year available 2013
Sub-type Article (original research)
DOI 10.1063/1.4834377
Open Access Status File (Publisher version)
Volume 103
Issue 22
Start page 223104.1
End page 223104.5
Total pages 5
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Language eng
Subject 3101 Physics and Astronomy (miscellaneous)
Abstract Simultaneous growth of 111B free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy {111}B interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain {111}B interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side {111}B interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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