Polarity-driven nonuniform composition in InGaAs nanowires

Guo, Ya-Nan, Burgess, Timothy, Gao, Qiang, Tan, H. Hoe, Jagadish, Chennupati and Zou, Jin (2013) Polarity-driven nonuniform composition in InGaAs nanowires. Nano Letters, 13 11: 5085-5089. doi:10.1021/nl402244p


Author Guo, Ya-Nan
Burgess, Timothy
Gao, Qiang
Tan, H. Hoe
Jagadish, Chennupati
Zou, Jin
Title Polarity-driven nonuniform composition in InGaAs nanowires
Journal name Nano Letters   Check publisher's open access policy
ISSN 1530-6984
1530-6992
Publication date 2013-11-13
Year available 2013
Sub-type Article (original research)
DOI 10.1021/nl402244p
Open Access Status Not yet assessed
Volume 13
Issue 11
Start page 5085
End page 5089
Total pages 5
Place of publication Washington, DC United States
Publisher American Chemical Society
Language eng
Subject 3104 Condensed Matter Physics
1502 Banking, Finance and Investment
1600 Chemistry
2500 Materials Science
2210 Mechanical Engineering
Abstract Manipulating the composition and morphology of semiconductor nanowires in a precisely controlled fashion is critical in developing nanowire devices. This is particularly true for ternary III-V nanowires. Many studies have shown the complexities within those nanowires. Here we report our findings of compositional irregularity in the shells of core-shell InGaAs nanowires with zinc-blende structure. Such an effect is caused by the crystal polarity within III-V zinc-blende lattice and the one-dimensional nature of nanowires that allows the formation of opposite polar surfaces simultaneously on the nanowire sidewalls. This polarity-driven effect in III-V nanowires may be utilized in manipulating the composition and morphology of III-V nanowires for device applications.
Keyword Core shell
InGaAs nanowires
Misfit strain
Nonuniform composition
Polarity
Zinc blende
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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