Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing

Chen, Bin, Wang, Jun, Gao, Qiang, Chen, Yujie, Liao, Xiaozhou, Lu, Chunsheng, Tan, Hark Hoe, Mai, Yiu-Wing, Zou, Jin, Ringer, Simon P., Gao, Huajian and Jagadish, Chennupati (2013) Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing. Nano Letters, 13 9: 4369-4373. doi:10.1021/nl402180k


Author Chen, Bin
Wang, Jun
Gao, Qiang
Chen, Yujie
Liao, Xiaozhou
Lu, Chunsheng
Tan, Hark Hoe
Mai, Yiu-Wing
Zou, Jin
Ringer, Simon P.
Gao, Huajian
Jagadish, Chennupati
Title Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
Journal name Nano Letters   Check publisher's open access policy
ISSN 1530-6984
1530-6992
Publication date 2013-09-11
Sub-type Article (original research)
DOI 10.1021/nl402180k
Volume 13
Issue 9
Start page 4369
End page 4373
Total pages 5
Place of publication Washington, DC United States
Publisher American Chemical Society
Language eng
Subject 3104 Condensed Matter Physics
1502 Banking, Finance and Investment
1600 Chemistry
2500 Materials Science
2210 Mechanical Engineering
Abstract Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.
Keyword GaAs nanowires
In situ deformation
Molecular dynamics
Stacking fault
Strengthening
Transmission electron microscopy
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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