Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition

Sun, Wen, Guo, Ya-Nan, Xu, Hong-Yi, Liao, Zhi-Ming, Gao, Qiang, Tan, Hark Hoe, Jagadish, Chennupati and Zou, Jin (2013) Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition. Journal of Physical Chemistry C, 117 37: 19234-19238. doi:10.1021/jp406294t


Author Sun, Wen
Guo, Ya-Nan
Xu, Hong-Yi
Liao, Zhi-Ming
Gao, Qiang
Tan, Hark Hoe
Jagadish, Chennupati
Zou, Jin
Title Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Formatted title
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal name Journal of Physical Chemistry C   Check publisher's open access policy
ISSN 1932-7447
1932-7455
Publication date 2013-09-19
Sub-type Article (original research)
DOI 10.1021/jp406294t
Volume 117
Issue 37
Start page 19234
End page 19238
Total pages 5
Place of publication Washington, DC, United States
Publisher American Chemical Society
Language eng
Subject 1606 Political Science
2504 Electronic, Optical and Magnetic Materials
2508 Surfaces, Coatings and Films
2100 Energy
Abstract In this study, the behavior of P incorporation GaAsP during ternary nanowires epitaxial growth is investigated. Detailed electron microscopy investigations indicate that (1) the P concentration in the nanowires is higher than that in the simultaneously grown planar layer and (2) the higher growth temperature leads to a higher P concentration in ternary nanowires. We anticipate that the minimization of misfit strain between the GaAsP layer and its underlying GaAs substrate and the complexity of precursor decomposition are responsible for the observed varied P concentrations. These findings implicate that the compositional control in ternary GaAsP nanowires is much more complicated than anticipated.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 7 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 7 times in Scopus Article | Citations
Google Scholar Search Google Scholar
Created: Tue, 19 Nov 2013, 21:50:38 EST by Katie Gollschewski on behalf of School of Mechanical and Mining Engineering