Effects of growth rate on InP nanowires morphology and crystal structure

Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., Zhang, X. and Zou, J. (2013) Effects of growth rate on InP nanowires morphology and crystal structure. Journal of Crystal Growth, 383 100-105. doi:10.1016/j.jcrysgro.2013.08.014


Author Paiman, S.
Gao, Q.
Tan, H. H.
Jagadish, C.
Zhang, X.
Zou, J.
Title Effects of growth rate on InP nanowires morphology and crystal structure
Journal name Journal of Crystal Growth   Check publisher's open access policy
ISSN 0022-0248
1873-5002
Publication date 2013-11-01
Year available 2013
Sub-type Article (original research)
DOI 10.1016/j.jcrysgro.2013.08.014
Open Access Status
Volume 383
Start page 100
End page 105
Total pages 6
Place of publication Amsterdam, The Netherlands
Publisher Elsevier BV
Language eng
Abstract We report the effects of growth rate on the crystal structure of InP nanowires grown on InP (111)B substrate by metal organic chemical vapour deposition (MOCVD) using gold nanoparticles as catalysts. Results showed that slower growth rate helps to reduce planar defects and the crystal structure changes from wurtzite to zinc-blende with increasing both group III and V precursors flows. Nonetheless, the tapering effect can be reduced with growth rate. High resolution transmission electron microscopy (HR-TEM) confirmed that the crystal structure changes with growth rate. (C) 2013 Elsevier B.V. All rights reserved
Formatted abstract
We report the effects of growth rate on the crystal structure of InP nanowires grown on InP (111)B substrate by metal organic chemical vapour deposition (MOCVD) using gold nanoparticles as catalysts. Results showed that slower growth rate helps to reduce planar defects and the crystal structure changes from wurtzite to zinc-blende with increasing both group III and V precursors flows. Nonetheless, the tapering effect can be reduced with growth rate. High resolution transmission electron microscopy (HR-TEM) confirmed that the crystal structure changes with growth rate.
Keyword Crystal structure
Growth rate
Compound Semiconductors
Semiconducting indium phosphide
Q-Index Code C1
Q-Index Status Confirmed Code
Grant ID 9001100
9314000
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: Official 2014 Collection
Centre for Microscopy and Microanalysis Publications
 
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