Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

Zhang, Zhi, Lu, Zhen-Yu, Chen, Ping-Ping, Xu, Hong-Yi, Guo, Ya-Nan, Liao, Zhi-Ming, Shi, Sui-Xing, Lu, Wei and Zou, Jin (2013) Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy. Applied Physics Letters, 103 7: . doi:10.1063/1.4818682

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Author Zhang, Zhi
Lu, Zhen-Yu
Chen, Ping-Ping
Xu, Hong-Yi
Guo, Ya-Nan
Liao, Zhi-Ming
Shi, Sui-Xing
Lu, Wei
Zou, Jin
Title Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2013-08-01
Year available 2013
Sub-type Article (original research)
DOI 10.1063/1.4818682
Open Access Status File (Publisher version)
Volume 103
Issue 7
Total pages 5
Place of publication College Park, MD United States
Publisher American Institute of Physics
Language eng
Formatted abstract
In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.
Keyword Ternary Ingaas Nanowires
Field effect transistors
Liquid solid mechanism
Heterostructure Nanowires
Semiconductor Nanowires
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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