Hot-filament-assisted growth of straight SiOx nanowires for optoelectronic application

Nie, Tian-Xiao, Chen, Zhi-Gang, Niu, Mu-Tong, Wu, Jonathon, Zhang, Jin-Ping, Wu, Yue-Qin, Fan, Yong-Liang, Yang, Xin-Ju, Jiang, Zui-Min and Zou, Jin (2013) Hot-filament-assisted growth of straight SiOx nanowires for optoelectronic application. Journal of Physical Chemistry C, 117 27: 14354-14361. doi:10.1021/jp403588p


Author Nie, Tian-Xiao
Chen, Zhi-Gang
Niu, Mu-Tong
Wu, Jonathon
Zhang, Jin-Ping
Wu, Yue-Qin
Fan, Yong-Liang
Yang, Xin-Ju
Jiang, Zui-Min
Zou, Jin
Title Hot-filament-assisted growth of straight SiOx nanowires for optoelectronic application
Formatted title
Hot-filament-assisted growth of straight SiOx nanowires for optoelectronic application
Journal name Journal of Physical Chemistry C   Check publisher's open access policy
ISSN 1932-7447
1932-7455
Publication date 2013-07-01
Year available 2013
Sub-type Article (original research)
DOI 10.1021/jp403588p
Open Access Status DOI
Volume 117
Issue 27
Start page 14354
End page 14361
Total pages 8
Place of publication Washington, DC United States
Publisher American Chemical Society
Language eng
Abstract Uniform and straight amorphous SiOx nanowires with a length of several micrometers and, an average diameter of 100 nm were synthesized by directly heating GeSi alloy film substrate with high melting-point tungsten. Systematically comparative experiments suggest that both the tungsten and GeSi alloy film play an important role in the formation of straight amorphous SiOx nanowire. Through detailed morphological, structural and chemical characterizations using electron microscopy, the contact angle anisotropy mechanism is suggested for the growth of the straight SiOx nanowires.
Formatted abstract
Uniform and straight amorphous SiOx nanowires with a length of several micrometers and an average diameter of 100 nm were synthesized by directly heating GeSi alloy film substrate with high melting-point tungsten. Systematically comparative experiments suggest that both the tungsten and GeSi alloy film play an important role in the formation of straight amorphous SiOx nanowire. Through detailed morphological, structural and chemical characterizations using electron microscopy, the contact angle anisotropy mechanism is suggested for the growth of the straight SiOx nanowires
Keyword Amorphous Silica Nanowires
Liquid solid mechanism
Oxide Nanowires
Low Temperature
Tungsten oxide
Q-Index Code C1
Q-Index Status Confirmed Code
Grant ID 2011CB925601
61274016
Institutional Status UQ

 
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