Solution-deposited zinc oxide and zinc oxide/pentacene bilayer transistors: high mobility n-channel, ambipolar and nonvolatile devices

Pal, Bhola Nath, Trottman, Phylicia, Sun, Jia and Katz, Howard E. (2008) Solution-deposited zinc oxide and zinc oxide/pentacene bilayer transistors: high mobility n-channel, ambipolar and nonvolatile devices. Advanced Functional Materials, 18 12: 1832-1839. doi:10.1002/adfm.200701430


Author Pal, Bhola Nath
Trottman, Phylicia
Sun, Jia
Katz, Howard E.
Title Solution-deposited zinc oxide and zinc oxide/pentacene bilayer transistors: high mobility n-channel, ambipolar and nonvolatile devices
Journal name Advanced Functional Materials   Check publisher's open access policy
ISSN 1616-301X
1616-3028
Publication date 2008-06-24
Sub-type Article (original research)
DOI 10.1002/adfm.200701430
Open Access Status Not Open Access
Volume 18
Issue 12
Start page 1832
End page 1839
Total pages 8
Place of publication Weinheim, Germany
Publisher Wiley
Language eng
Formatted abstract
A solution processed n-channel zinc oxide (ZnO) field effect transistor (FET) was fabricated by simple dip coating and subsequent heat treatment of a zinc acetate film. The field effect mobility of electrons depends on ZnO grain size, controlled by changing the number of coatings and zinc acetate solution concentration. The highest electron mobility achieved by this method is 7.2 cm2 V−1 s−1 with On/Off ratio of 70. This electron mobility is higher than for the most recently reported solution processed ZnO transistor. We also fabricated bilayer transistors where the first layer is ZnO, and the second layer is pentacene, a p-channel organic which is deposited by thermal evaporation. By changing the ZnO grain size (or thickness) this type of bilayer transistor shows p-channel, ambipolar and n-channel behavior. For the ambipolar transistor, well balanced electron and hole mobilities are 7.6 × 10−3 and 6.3 × 10−3 cm2 V−1 s−1 respectively. When the ZnO layer is very thin, the transistor shows p-channel behavior with very high reversible hysteresis. The nonvolatile tuning function of this transistor was investigated.
Keyword Ambipolar
High mobility
Memory
N-channel
Transistor
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mathematics and Physics
 
Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 72 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 77 times in Scopus Article | Citations
Google Scholar Search Google Scholar
Created: Sat, 11 May 2013, 05:41:53 EST by System User on behalf of Scholarly Communication and Digitisation Service