Strain relaxation by alloying effects in Ge islands grown on Si(001)

Liao, XZ, Zou, J, Cockayne, DJH, Qin, J, Jiang, ZM, Wang, X and Leon, R (1999) Strain relaxation by alloying effects in Ge islands grown on Si(001). Physical Review B, 60 23: 15605-15608. doi:10.1103/PhysRevB.60.15605

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Author Liao, XZ
Zou, J
Cockayne, DJH
Qin, J
Jiang, ZM
Wang, X
Leon, R
Title Strain relaxation by alloying effects in Ge islands grown on Si(001)
Journal name Physical Review B   Check publisher's open access policy
ISSN 0163-1829
Publication date 1999-12-01
Sub-type Article (original research)
DOI 10.1103/PhysRevB.60.15605
Open Access Status File (Publisher version)
Volume 60
Issue 23
Start page 15605
End page 15608
Total pages 4
Language eng
Keyword Transmission-Electron-Microscopy
Molecular-Beam Epitaxy
Quantum Dots
Heteroepitaxial Growth
Shape
Equilibrium
Transitions
Nucleation
Pyramids
Si(100)
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: ResearcherID Downloads - Archived
 
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