Manipulating surface states in topological insulator nanoribbons

Xiu, Faxian, He, Liang, Wang, Yong, Cheng, Lina, Chang, Li-Te, Lang, Murong, Huang, Guan, Kou, Xufeng, Zhou, Yi, Jiang, Xiaowei, Chen, Zhigang, Zou, Jin, Shailos, Alexandros and Wang, Kang L. (2011) Manipulating surface states in topological insulator nanoribbons. Nature Nanotechnology, 6 4: 216-221. doi:10.1038/nnano.2011.19

Author Xiu, Faxian
He, Liang
Wang, Yong
Cheng, Lina
Chang, Li-Te
Lang, Murong
Huang, Guan
Kou, Xufeng
Zhou, Yi
Jiang, Xiaowei
Chen, Zhigang
Zou, Jin
Shailos, Alexandros
Wang, Kang L.
Title Manipulating surface states in topological insulator nanoribbons
Journal name Nature Nanotechnology   Check publisher's open access policy
ISSN 1748-3387
Publication date 2011-04-01
Year available 2011
Sub-type Article (original research)
DOI 10.1038/nnano.2011.19
Open Access Status Not Open Access
Volume 6
Issue 4
Start page 216
End page 221
Total pages 6
Place of publication London, United Kingdom
Publisher Nature Publishing Group
Language eng
Formatted abstract
Topological insulators display unique properties, such as the quantum spin Hall effect, because time-reversal symmetry allows charges and spins to propagate along the edge or surface of the topological insulator without scattering1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14. However, the direct manipulation of these edge/surface states is difficult because they are significantly outnumbered by bulk carriers9, 15, 16. Here, we report experimental evidence for the modulation of these surface states by using a gate voltage to control quantum oscillations in Bi2Te3 nanoribbons. Surface conduction can be significantly enhanced by the gate voltage, with the mobility and Fermi velocity reaching values as high as ~5,800 cm2 V−1 s−1 and ~3.7 × 105 m s−1, respectively, with up to ~51% of the total conductance being due to the surface states. We also report the first observation of h/2e periodic oscillations, suggesting the presence of time-reversed paths with the same relative zero phase at the interference point16. The high surface conduction and ability to manipulate the surface states demonstrated here could lead to new applications in nanoelectronics and spintronics.
Keyword Hgte Quantum-Wells
Single Dirac Cone
Q-Index Code C1
Q-Index Status Confirmed Code
Grant ID DP0984755
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
Official 2012 Collection
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Citation counts: TR Web of Science Citation Count  Cited 228 times in Thomson Reuters Web of Science Article | Citations
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