Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

Kang, Jung-Hyun, Gao, Qiang, Joyce, Hannah J., Kim, Yong, Guo, Yanan, Xu, Hongyi, Zou, Jin, Fickenscher, Melody A., Smith, Leigh M., Jackson, Howard E., Yarrison-Rice, J. M., Tan, Hark Hoe and Jagadish, Chennupati (2010). Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (57-58). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699778

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Author Kang, Jung-Hyun
Gao, Qiang
Joyce, Hannah J.
Kim, Yong
Guo, Yanan
Xu, Hongyi
Zou, Jin
Fickenscher, Melody A.
Smith, Leigh M.
Jackson, Howard E.
Yarrison-Rice, J. M.
Tan, Hark Hoe
Jagadish, Chennupati
Title of paper Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
Conference name 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
Conference location Canberra, A.C.T., Australia
Conference dates 12-15 December 2010
Proceedings title COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices
Journal name Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Place of Publication Piscataway, NJ, U.S.A.
Publisher IEEE Xplore
Publication Year 2010
Year available 2011
Sub-type Poster
DOI 10.1109/COMMAD.2010.5699778
Open Access Status Not Open Access
ISBN 9781424473342
9781424473328
ISSN 1097-2137
Volume 1399
Start page 57
End page 58
Total pages 2
Language eng
Abstract/Summary GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.
Keyword Engineering, Electrical & Electronic
Physics, Applied
Engineering
Physics
Q-Index Code EX
Q-Index Status Provisional Code
Institutional Status UQ
Additional Notes Poster Session 1

Document type: Conference Paper
Sub-type: Physics of Semiconductors: 30Th International Conference On the Physics of Semiconductors
Collections: School of Mechanical & Mining Engineering Publications
Non HERDC
 
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Created: Fri, 06 May 2011, 22:50:32 EST by Sally Beard on behalf of School of Mechanical and Mining Engineering