Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers

Lawrie, Kirsten J., Blakey, Idriss, Blinco, James P., Cheng, Han Hao, Gronheid, Roel, Jack, Kevin S., Pollentier, Ivan, Leesion, Michael J., Younkin, Todd R. and Whittaker, Andrew K. (2011) Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers. Journal of Materials Chemistry, 21 15: 5629-5637. doi:10.1039/c0jm03288c


Author Lawrie, Kirsten J.
Blakey, Idriss
Blinco, James P.
Cheng, Han Hao
Gronheid, Roel
Jack, Kevin S.
Pollentier, Ivan
Leesion, Michael J.
Younkin, Todd R.
Whittaker, Andrew K.
Title Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers
Journal name Journal of Materials Chemistry   Check publisher's open access policy
ISSN 0959-9428
1364-5501
Publication date 2011-01-01
Sub-type Article (original research)
DOI 10.1039/c0jm03288c
Open Access Status Not Open Access
Volume 21
Issue 15
Start page 5629
End page 5637
Total pages 9
Place of publication Cambridge, United Kingdom
Publisher Royal Society of Chemistry
Language eng
Formatted abstract
A series of polymers with a comb architecture were prepared where the poly(olefin sulfone) backbone was designed to be highly sensitive to extreme ultraviolet (EUV) radiation, while the well-defined poly(methyl methacrylate) (PMMA) arms were incorporated with the aim of increasing structural stability. It is hypothesized that upon EUV radiation rapid degradation of the polysulfone backbone will occur leaving behind the well-defined PMMA arms. The synthesized polymers were characterised and have had their performance as chain-scission EUV photoresists evaluated. It was found that all materials possess high sensitivity towards degradation by EUV radiation (E0 in the range 4-6 mJ cm-2). Selective degradation of the poly(1-pentene sulfone) backbone relative to the PMMA arms was demonstrated by mass spectrometry headspace analysis during EUV irradiation and by grazing-angle ATR-FTIR. EUV interference patterning has shown that materials are capable of resolving 30 nm 1:1 line:space features. The incorporation of PMMA was found to increase the structural integrity of the patterned features. Thus, it has been shown that terpolymer materials possessing a highly sensitive poly(olefin sulfone) backbone and PMMA arms are able to provide a tuneable materials platform for chain scission EUV resists. These materials have the potential to benefit applications that require nanopattering, such as computer chip manufacture and nano-MEMS.
© The Royal Society of Chemistry.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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Created: Wed, 04 May 2011, 22:06:19 EST by Dr Elliot Cheng on behalf of Aust Institute for Bioengineering & Nanotechnology