High performance light emitting transistors

Namdas, Ebinazar B., Ledochowitsch, Peter, Yuen, Jonathan D., Moses, Daniel and Heeger, Alan J. (2008) High performance light emitting transistors. Applied Physics Letters, 92 18: 183304-1-183304-3. doi:10.1063/1.2920436

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Author Namdas, Ebinazar B.
Ledochowitsch, Peter
Yuen, Jonathan D.
Moses, Daniel
Heeger, Alan J.
Title High performance light emitting transistors
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1520-8842
1077-3118
Publication date 2008-05-05
Sub-type Article (original research)
DOI 10.1063/1.2920436
Open Access Status File (Publisher version)
Volume 92
Issue 18
Start page 183304-1
End page 183304-3
Total pages 3
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Language eng
Formatted abstract
Solution processed light emitting field-effect transistors (LEFETs) with peak brightness exceeding 2500 cd/m2 and external quantum efficiency of 0.15% are demonstrated. The devices utilized a bilayer film comprising a hole transporting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b] thiophene) and a light emitting polymer, Super Yellow, a polyphenylenevinylene derivative. The LEFETs were fabricated in the bottom gate architecture with top-contact Ca/Ag as source/drain electrodes. Light emission was controlled by the gate voltage which controls the hole current. These results indicate that high brightness LEFETs can be made by using the bilayer film (hole transporting layer and a light emitting polymer).
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ
Additional Notes Article # 183304

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mathematics and Physics
 
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Created: Wed, 09 Mar 2011, 23:18:19 EST