Sulfur-doped gallium phosphide nanowires and their optoelectronic properties

Chen, Zhi-Gang, Cheng, Lina, Lu, Gao Qing (Max) and Zou, Jin (2010) Sulfur-doped gallium phosphide nanowires and their optoelectronic properties. Nanotechnology, 21 37: 375701.1-375701.6. doi:10.1088/0957-4484/21/37/375701

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Author Chen, Zhi-Gang
Cheng, Lina
Lu, Gao Qing (Max)
Zou, Jin
Title Sulfur-doped gallium phosphide nanowires and their optoelectronic properties
Journal name Nanotechnology   Check publisher's open access policy
ISSN 0957-4484
Publication date 2010-09-17
Sub-type Article (original research)
DOI 10.1088/0957-4484/21/37/375701
Volume 21
Issue 37
Start page 375701.1
End page 375701.6
Total pages 6
Editor Mark Reed
Place of publication Bristol, U.K.
Publisher Institute of Physics (IOP) Publishing
Language eng
Formatted abstract
Sulfur-doped gallium phosphide nanowires were synthesized in a high yield by a facile sublimation of ball-milled mixture powders in a confined reaction zone. The nanowires have diameters in the range of 50–200 nm and lengths up to tens of micrometers. They consist of <111> growth direction. Electron energy-loss spectroscopy reveals that the sulfur doping occurs in the uniform forms of the body. Amorphous Ga–O containing a self-catalyst growth mechanism is proposed based on the detailed characterizations. Photoluminescence shows strong visible emissions at room temperature, indicating their potential applications in light sources, laser or light emitting display devices.
© 2010 IOP Publishing Ltd
Keyword GaP
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article # 375701

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Created: Sun, 19 Sep 2010, 10:03:23 EST