Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements

Bertling, K., Rakic, A. D., Yeow, Y. T., Brawley, A., Domyo, H. and Rotella, F. M. (2010) Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements. Electronics Letters, 46 12: 863-864. doi:10.1049/el.2010.0922


Author Bertling, K.
Rakic, A. D.
Yeow, Y. T.
Brawley, A.
Domyo, H.
Rotella, F. M.
Title Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements
Journal name Electronics Letters   Check publisher's open access policy
ISSN 0013-5194
1350-911X
Publication date 2010-06-10
Sub-type Article (original research)
DOI 10.1049/el.2010.0922
Volume 46
Issue 12
Start page 863
End page 864
Total pages 2
Place of publication Stevenage, Herts, United Kingdom
Publisher The Institution of Engineering and Technology
Collection year 2011
Language eng
Abstract Two methods for the extraction of the small-signal equivalent circuit of high frequency silicon on sapphire (SOS) MOSFETs are compared. One technique employs microwave vector network analyser measurements in the 0.2-24GHz range, while the other uses a low frequency LCR meter at 100kHz to determine the circuit element values. Results presented show excellent agreement between the two methods. It is concluded that the low frequency method can be successfully used to extract high frequency circuit-model elements and reasons for this are offered. © 2010 The Institution of Engineering and Technology.
Keyword Circuit elements
High frequency
LCR meters
Low frequency
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: Official 2011 Collection
School of Information Technology and Electrical Engineering Publications
 
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Created: Sun, 11 Jul 2010, 10:06:17 EST