Instability of the noise level in polymer field-effect transistors with non-stationary electrical characteristics

Marinov, O., Deen, M. J., Yu, J., Vamvounis, G., Holdcroft, S. and Woods, W. (2003). Instability of the noise level in polymer field-effect transistors with non-stationary electrical characteristics. In: Sergey M. Bezrukov, AIP Conference Proceedings: Unsolved Problems of Noise and Fluctuations. UPoN 2002 Third International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology and High Technology, Washington, DC, (488-495). 3-6 September 2002. doi:10.1063/1.1584925

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Author Marinov, O.
Deen, M. J.
Yu, J.
Vamvounis, G.
Holdcroft, S.
Woods, W.
Title of paper Instability of the noise level in polymer field-effect transistors with non-stationary electrical characteristics
Conference name UPoN 2002 Third International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology and High Technology
Conference location Washington, DC
Conference dates 3-6 September 2002
Proceedings title AIP Conference Proceedings: Unsolved Problems of Noise and Fluctuations   Check publisher's open access policy
Place of Publication Melville, NY, United States
Publisher American Institute of Physics
Publication Year 2003
Sub-type Fully published paper
DOI 10.1063/1.1584925
Open Access Status File (Publisher version)
ISBN 0735401276
ISSN 0094-243X
Editor Sergey M. Bezrukov
Volume 665
Start page 488
End page 495
Total pages 8
Language eng
Abstract/Summary The low frequency noise (LFN) properties of field-effect transistors (FETs) using polymers as the semiconducting substrate material are investigated and explained in terms of the charge carrier transport in polymer thin-film structure. Three mechanisms contribute to the carrier transport - charge injection from source electrode into polymer, charge hopping between polymer molecules for drift transport toward the drain, and charge buildup, probably at polymeroxide interface. Charge buildup is responsible for non-stationary electrical characteristics, but does not contribute significantly to the LFN. Charge hopping determines the maximum value of the mobility and the minimum value of mobility 1/f noise. The variations of the PFET characteristics are mainly due to dispersion in the injection barrier of source-to-polymer contact. High disorder in the polymer at the source contact can increase the leakage current in PFET and can introduce number fluctuation S-GN in the polymer conduction on top of the mobility fluctuation. SGN is proportional to the DC power applied to the injection barrier and should be assumed as a voltage source, since carrier hopping in the polymer reduces the effect of the injection noise. At present, the physical origin of SGN is not fully understood.
Subjects 0303 Macromolecular and Materials Chemistry
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Conference Paper
Sub-type: Fully published paper
Collections: Excellence in Research Australia (ERA) - Collection
School of Chemistry and Molecular Biosciences
 
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Created: Thu, 28 Jan 2010, 01:10:13 EST by Thelma Whitbourne on behalf of Faculty of Science