High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer

Wang, Y., Zou, J., Zhao, Z. M., Hao, Z. and Wang, K. L. (2009) High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer. Nanotechnology, 20 30: 305301.1-305301.5. doi:10.1088/0957-4484/20/30/305301

Author Wang, Y.
Zou, J.
Zhao, Z. M.
Hao, Z.
Wang, K. L.
Title High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer
Journal name Nanotechnology   Check publisher's open access policy
ISSN 0957-4484
Publication date 2009-07-07
Year available 2009
Sub-type Article (original research)
DOI 10.1088/0957-4484/20/30/305301
Open Access Status
Volume 20
Issue 30
Start page 305301.1
End page 305301.5
Total pages 5
Place of publication Bristol, United Kingdom
Publisher Institute of Physics Publishing Ltd.
Language eng
Subject C1
970102 Expanding Knowledge in the Physical Sciences
970109 Expanding Knowledge in Engineering
970110 Expanding Knowledge in Technology
091203 Compound Semiconductors
091205 Functional Materials
100708 Nanomaterials
100712 Nanoscale Characterisation
Abstract Ordered and dense InAs quantum dots grown on patterned Si(100) with a thin GaAs buffer layer have been investigated by transmission electron microscopy and electron energy loss spectroscopy. {111} faceted InAs quantum dots with good crystallinity were observed on top of the underlying GaAs buffer layer. It was revealed that the GaAs buffer layer and the lateral expansion of InAs have played key roles in releasing the misfit strain between InAs and Si and suppressing the formation of lattice defects in InAs quantum dots. These results suggest a possible pathway for the strain relaxation in the formation of quantum dots.
Keyword Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Science & Technology - Other Topics
Materials Science
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article number 305301

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Created: Thu, 03 Sep 2009, 17:50:01 EST by Mr Andrew Martlew on behalf of School of Mechanical and Mining Engineering