Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity

Chen, Zhi-Gang, Zou, Jin, Liu, Gang, Lu, Hao Feng, Li, Feng, Lu, Gao Qing and Cheng, Hui Ming (2008) Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity. Nanotechnology, 19 5: Article Number: 055710. doi:10.1088/0957-4484/19/05/055710


Author Chen, Zhi-Gang
Zou, Jin
Liu, Gang
Lu, Hao Feng
Li, Feng
Lu, Gao Qing
Cheng, Hui Ming
Title Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity
Journal name Nanotechnology   Check publisher's open access policy
ISSN 0957-4484
Publication date 2008-02-06
Year available 2008
Sub-type Article (original research)
DOI 10.1088/0957-4484/19/05/055710
Open Access Status DOI
Volume 19
Issue 5
Start page Article Number: 055710
Total pages 8
Editor M. Reed
Place of publication Bristol, England
Publisher Institute of Physics Publishing
Language eng
Subject 291400 Materials Engineering
C1
970102 Expanding Knowledge in the Physical Sciences
100708 Nanomaterials
Abstract Oriented ZnS nanobelts were grown on an Si substrate using hydrogen-assisted thermal evaporation under moist gas conditions. It was found that these ZnS nanobelts had a single crystal hexagonal wurtzite structure growing along the [0001] direction. They had a rectangular cross section with lengths of up to tens of micrometres, a typical width of 50–150 nm, and a thickness of ~40 nm. A silicon-induced vapour–liquid–solid process was proposed for the formation of the ZnS nanobelts and their assembly. These oriented nanobelts have much faster response time to hydrogen gas than that of pure ZnO and Pd-sensitized ZnO, showing excellent hydrogen sensing properties.
Keyword Titania Nanotubes
Nanowires
Sensors
Photoluminescence
Nanostructures
growth
Co
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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Created: Wed, 25 Mar 2009, 20:11:53 EST by Sally Beard on behalf of Materials