Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96Mn0.04 thin films

Wang, Yong, Zou, Jin, Zhao, Zuoming, Han, Xinhai, Zhou, Xiaoyu and Wang, Kang L. (2008) Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96Mn0.04 thin films. Applied Physics Letters, 92 10: 101913.1-101913.3. doi:10.1063/1.2884527

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Author Wang, Yong
Zou, Jin
Zhao, Zuoming
Han, Xinhai
Zhou, Xiaoyu
Wang, Kang L.
Title Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96Mn0.04 thin films
Formatted title
Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96Mn0.04 thin films
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2008-03-10
Year available 2008
Sub-type Article (original research)
DOI 10.1063/1.2884527
Open Access Status File (Publisher version)
Volume 92
Issue 10
Start page 101913.1
End page 101913.3
Total pages 3
Editor N. Q. Lam
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Language eng
Subject C1
970102 Expanding Knowledge in the Physical Sciences
100708 Nanomaterials
Abstract Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11Ge8 and the hexagonal Mn5Ge2 (a=0.72 nm and c=1.3 nm) clusters were confirmed to coexist in the thicker Ge0.96Mn0.04 film (80 nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (<=40 nm) suggests that, for a given Mn concentration and growth/annealing condition, a critical thickness exists for the formation of Mn-rich clusters. (C) 2008 American Institute of Physics.
Formatted abstract
Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11Ge8 and the hexagonal Mn5Ge2 (a=0.72 nm and c=1.3 nm) clusters were confirmed to coexist in the thicker Ge0.96Mn0.04 film (80 nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (<=40 nm) suggests that, for a given Mn concentration and growth/annealing condition, a critical thickness exists for the formation of Mn-rich clusters.
Keyword Temperature ferromagnetism
semiconductors
MNXGE1-X
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article number 101913

 
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Created: Sat, 21 Mar 2009, 02:37:38 EST by Sally Beard on behalf of Materials