Determination of carrier generation lifetime via current transient in MOS capacitor

Kong, Frederick, Lau, Mabe and Yeow, Yew-Tong (1999). Determination of carrier generation lifetime via current transient in MOS capacitor. In: L Faraone, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'98), Perth, WA, (438-441). 14-16 December 1998. doi:10.1109/COMMAD.1998.791683


Author Kong, Frederick
Lau, Mabe
Yeow, Yew-Tong
Title of paper Determination of carrier generation lifetime via current transient in MOS capacitor
Conference name Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'98)
Conference location Perth, WA
Conference dates 14-16 December 1998
Proceedings title Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices
Journal name Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Place of Publication Digital Library
Publisher IEEE - Institute for Electrical and Electronic Engineers Inc
Publication Year 1999
Sub-type Fully published paper
DOI 10.1109/COMMAD.1998.791683
ISBN 0780345134
Editor L Faraone
Start page 438
End page 441
Total pages 4
Language eng
Abstract/Summary A technique for the measurement of semiconductor minority carrier generation lifetime based on MOS capacitor current transients is presented. The lifetime is extracted by fitting a derived analytical model of the current transients to the experimental data. Values of lifetime obtained by this technique are shown to agree well with conventional capacitance transient methods. A 2D numerical simulation to verify the method is also presented
Subjects E3
780102 Physical sciences
290902 Integrated Circuits
Keyword MOS capacitors
carrier lifetime
minority carriers
transients
Q-Index Code E3

 
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Created: Sat, 07 Jun 2008, 01:42:05 EST